VALENCE BAND-STRUCTURE OF CD0.7HG0.3TE DETERMINED BY ANGULAR RESOLVED PHOTOEMISSION

被引：4

作者：

LEVEQUE, G

ORSAL, B

ALABEDRA, R

FLACHET, JC

机构：

[1] UNIV MONTPELLIER 2,CEM,F-34060 MONTPELLIER,FRANCE

[2] SOC ANONYME TELECOMM,F-75013 PARIS,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90997-Y

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have performed angular resolved photoemission at hv = 21.2 eV on cleaved CdHgTe(110) surfaces using a fast spectrometer. Image processing of the EDC curves has permitted us to draw the three upper valence bands, i.e. the heavy holes band, the light hole band and the split-off band. Measurement of the slope of the split-off band has given the constant p used in the k . p band calculation method. By fitting the k . p method to the experimental band dispersion, we have determined the effective mass of the holes in the whole Brillouin zone. © 1989.

引用

页码：364 / 367

页数：4

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