EFFECT OF AUGER RECOMBINATION ON EMITTER INJECTION EFFICIENCY OF BIPOLAR-TRANSISTORS

被引：24

作者：

SHENG, WW ^{[1
]}

机构：

[1] GE,NEW YORK,NY 13021

来源：

关键词：

D O I：

10.1109/T-ED.1975.18068

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：25 / 27

页数：3

共 7 条

[1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[2] DEMAN HJJ, 1971, IEEE T ELECTRON DEVI, VED18, P833
[3] Hall R. N., 1959, P IEEE, V106, P923, DOI [DOI 10.1049/PI-B-2.1959.0171, 10.1049/pi-b-2.1959.0171]
[4] MERTENS RP, 1973, IEEE T ELECTRON DEVI, VED20, P772
[5] NEUBERGER M, 1969, AD698342 HUGH AIRCR
[6] SPECTRUM AND DECAY OF RECOMBINATION RADIATION FROM STRONGLY EXCITED SILICON
NILSSON, NG
SVANTESSON, KG
[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (01) : 155 - +
[7] WHITTIER RJ, 1968, INT ELECTRON DEVICES