MASKLESS ION-BEAM ASSISTED ETCHING OF SI USING CHLORINE GAS

被引：10

作者：

OCHIAI, Y

SHIHOYAMA, K

MASUYAMA, A

GAMO, K

SHIOKAWA, T

TOYODA, K

NAMBA, S

机构：

[1] TOYO UNIV,FAC ENGN,KAWAGOE,SAITAMA 350,JAPAN

[2] INST PHYS & CHEM RES,RIKEN,WAKO,SAITAMA 35101,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 03期

关键词：

D O I：

10.1143/JJAP.24.L169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L169 / L172

页数：4

共 22 条

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