OXIDATION OF SILICON (OXY)NITRIDE AND NITRIDATION OF SILICON DIOXIDE - MANIFESTATIONS OF THE SAME CHEMICAL-REACTION SYSTEM

被引：21

作者：

HABRAKEN, FHPM ^{[1
]}

KUIPER, AET ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

THIN SOLID FILMS | 1990年 / 193卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(90)90217-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The study of oxidation mechanism of low pressure and plasma-enhanced chemically vapour-deposited silicon nitride and oxynitride thin films in H2O-02 mixtures and the nitridation of SiO2 thin films in NH3 is motivated by the growing interest in these processes for use in miroelectronics technology. In this paper, recent experimental results of oxidation and nitridation studies will be reviewed. Most reported data have been obtained using high energy ion beam analysis techniques. The results of (among others) hydrogen depth-profiling measurements unravel the essential role of hydrogen in the conversion of (oxy)nitride into oxide and of oxide into oxynitride. A unified picture describing the mechanisms of the oxidation and nitridation will be discussed.

引用

页码：665 / 674

页数：10

共 35 条

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