MULTIPHOTON MECHANISM OF GENERATION OF ELEMENTARY EXCITATIONS IN DISPERSE SIO2

The generation of elementary electron excitations in small particles of SiO2 under intensive infrared excitation (lambda(exc) = 1064 nm, F(exc) =10(5)-2x10(8) W/cm2, tau(p) = 20 ns) was examined. The analysis of these processes was based on the investigations of spectral-luminescence properties under multiphoton excitation of a dispersion of small particles of SiO2. It was determined that the generation mechanisms of elementary electron excitations in such samples of SiO2 are the photoionization process under multiphoton charge modification of defect centers and the generation of relaxed excitons in non-disturbed silica.