MINORITY CARRIER LIFETIME IN UNIAXIALLY STRESSED GERMANIUM

被引：19

作者：

MATUKURA, Y

MIURA, Y

机构：

来源：

关键词：

D O I：

10.1143/JJAP.4.72

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：72 / &

共 6 条

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[2] MATUKURA Y, 1964, JPN J APPL PHYS, V3, P516
[3] MATUKURA Y, TO BE PUBLISHED
[4] RINDNER W, 1963, J APPL PHYS, V34, P1598
[5] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
[6] EFFECT OF MECHANICAL STRESS ON P-N JUNCTION DEVICE CHARACTERISTICS
WORTMAN, JJ
BURGER, RM
HAUSER, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) : 2122 - &