RECOMBINATION AND IMPACT-IONIZATION PECULIARITIES IN MANY-VALLEY SEMICONDUCTORS

被引：4

作者：

MITIN, VV ^{[1
]}

ASCHE, M ^{[1
]}

KOSTIAL, H ^{[1
]}

机构：

[1] ACAD SCI GDR,ZENT INST ELEKTRON PHYS,DDR-1086 BERLIN,GER DEM REP

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.33.4100

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4100 / 4107

页数：8

共 33 条

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[6] IONIZATION OF LOW DONOR LEVELS AND RECOMBINATION OF HOT-ELECTRONS IN N-SI AT LOW-TEMPERATURES [J].

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[7]

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[8]

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[9] EXPERIMENTAL INDICATION OF THE PRESENCE OF LOOPS FOR HOT-ELECTRON PROPERTIES IN MANY-VALLEY SEMICONDUCTORS [J].

ASCHE, M ;

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[10]

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