GROWTH AND CHARACTERIZATION OF COMPOUND SEMICONDUCTORS BY ATOMIC LAYER EPITAXY

被引：25

作者：

TISCHLER, MA

BEDAIR, SM

机构：

来源：

关键词：

D O I：

10.1016/0022-0248(86)90287-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：89 / 94

页数：6

共 8 条

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BEDAIR, SM
TISCHLER, MA
KATSUYAMA, T
ELMASRY, NA
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (01) : 51 - 53
[2] MOLECULAR LAYER EPITAXY
NISHIZAWA, J
ABE, H
KURABAYASHI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1197 - 1200
[3] CHARACTERIZATION OF SURFACE EXCHANGE-REACTIONS USED TO GROW COMPOUND FILMS
PESSA, M
MAKELA, R
SUNTOLA, T
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (03) : 131 - 132
[4] ATOMIC LAYER EPITAXY OF CDTE ON THE POLAR-(111)A AND B(111)-SURFACES OF CDTE SUBSTRATES
PESSA, M
JYLHA, O
HERMAN, MA
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 67 (02) : 255 - 260
[5] Suntola T, 1977, U.S. Patent, Patent No. [4058430, 4,058,430]
[6] TISCHLER MA, 1986, UNPUB APPL PHYS LETT
[7] TISCHLER MA, UNPUB
[8] TISCHLER MA, 1985, JUN EL MAT C BOULD