DIELECTRICALLY ISOLATED SILICON-ON-INSULATOR ISLANDS BY MASKED OXYGEN IMPLANTATION

被引：9

作者：

DAVIS, JR ^{[1
]}

ROBINSON, A ^{[1
]}

REESON, KJ ^{[1
]}

HEMMENT, PLF ^{[1
]}

机构：

[1] UNIV SURREY,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 18期

关键词：

D O I：

10.1063/1.98643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1419 / 1421

页数：3

共 9 条

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[2] HIGH-PERFORMANCE SOI-CMOS TRANSISTORS IN OXYGEN-IMPLANTED SILICON WITHOUT EPITAXY [J].

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[4] NOVEL DIELECTRIC SILICON PLANAR STRUCTURES FORMED BY ION-BEAM SYNTHESIS [J].

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[5]

HEMMENT PLF, 1986, MATERIALS RESEARCH S, V53, P207

[6] PATTERNED IMPLANTED BURIED-OXIDE TRANSISTOR STRUCTURES [J].

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JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :423-426

[7]

NORMAN GE, 1982, SILICON INSULATOR VL, V4, P1

[8] A NOVEL SELF-ALIGNED OXYGEN (SALOX) IMPLANTED SOI MOSFET DEVICE STRUCTURE [J].

TZENG, JC ;

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :112-115

[9]

Ziegler J. F., 1985, STOPPING RANGE IONS, V1, DOI [10.1007/978-1-4615-8103-1_3, DOI 10.1007/978-1-4615-8103-1_3]

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