SCANNING-TUNNELING-MICROSCOPY AND SPECTROSCOPY OF SI-BASED HETEROSTRUCTURES

被引：7

作者：

YU, ET ^{[1
]}

JOHNSON, MB ^{[1
]}

POWELL, AR ^{[1
]}

HALBOUT, JM ^{[1
]}

IYER, SS ^{[1
]}

机构：

[1] IBM CORP,DIV RES,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586830

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have used cross-sectional scanning tunneling microscopy (STM) and spectroscopy to study the electronic properties of Si (001) p-n junctions and Si/Si1-xGex (001) strained-layer superlattices grown by molecular-beam epitaxy. Spectroscopic measurements on Si p-n junctions show a clear transition between p- and n-type Si, and variations in the band-edge energies can be detected with a spatial resolution of better than 100 angstrom. Cross-sectional STM measurements on Si/Si1-xGex superlattices show clear topographic contrast between the Si and Si1-xGex layers, and features such as band-edge discontinuities and band bending arising from doping can be seen in spectroscopic measurements across the superlattice structures.

引用

页码：1149 / 1153

页数：5

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