TIME PERTURBATION ANALYSIS FOR THE MOS SYSTEM

被引：3

作者：

GAITAN, M

MAYERGOYZ, ID

机构：

[1] NBS,DIV SEMICOND ELECTR,GAITHERSBURG,MD 20899

[2] UNIV MARYLAND,INST ADV COMP STUDIES,COLLEGE PK,MD 20742

[3] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742

来源：

COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING | 1987年 / 6卷 / 02期

关键词：

D O I：

10.1108/eb010305

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

引用

页码：77 / 83

页数：7

共 10 条

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BLUE, JL ;

WILSON, CL .

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[3]

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[4]

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[5] SOLUTION OF THE NONLINEAR POISSON EQUATION OF SEMICONDUCTOR-DEVICE THEORY [J].

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JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :195-199

[6]

NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[7]

NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO, P585

[8]

Selberherr, 1984, ANAL SIMULATION SEMI

[9] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

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READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[10]

SZE SM, 1981, PHYSICS SEMICONDUCTO

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