PREPARATION AND PROPERTIES OF ANTIMONY-DOPED TIN OXIDE-FILMS DEPOSITED BY RF REACTIVE SPUTTERING

The electrical and optical properties of reactively co-sputtered antimony-doped tin oxide (SnO//2:Sb) films were investigated as functions of the antimony-to-tin surface area ratio of the target. The films, which were 3500 A thick, were prepared under a constant pressure of 2 multiplied by 10** minus **2 Torr using an Ar-30vol. %O//2 mixture. The electrical resistivity and spectral transmittance of the films depend strongly on the antimony-to-tin surface ratio of the target. The carrier concentration and Hall mobility of the films were also measured. The results of X-ray diffraction analysis are described.