APPLICATIONS OF SIMS, SAES AND XPS TO PROBLEMS IN THE SEMICONDUCTOR INDUSTRY

被引:9
作者
ALNOT, P
HUBER, AM
OLIVIER, J
机构
关键词
D O I
10.1002/sia.740090504
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:283 / 291
页数:9
相关论文
共 40 条
[1]  
ADAMS AC, 1983, J ELECTROCHEM SOC, V120, P408
[2]   AN ACCURATE METHOD TO CHECK CHEMICAL INTERFACES OF EPITAXIAL III-V-COMPOUNDS [J].
BISARO, R ;
LAURENCIN, G ;
FRIEDERICH, A ;
RAZEGHI, M .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :978-980
[3]   BAND-STRUCTURE AND REFLECTIVITY OF GAN [J].
BLOOM, S ;
HARBEKE, G ;
MEIER, E ;
ORTENBUR.IB .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (01) :161-168
[4]  
CAZAUX J, 1984, J PHYS LETT-PARIS, V45, pL999, DOI 10.1051/jphyslet:019840045020099900
[5]  
CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397
[6]  
CHYE PW, 1979, J VAC SCI TECHNOL, V16, P119
[7]   INFLUENCE OF DEPOSITION TEMPERATURE, GAS-PRESSURE, GAS-PHASE COMPOSITION, AND RF FREQUENCY ON COMPOSITION AND MECHANICAL-STRESS OF PLASMA SILICON-NITRIDE LAYERS [J].
CLAASSEN, WAP ;
VALKENBURG, WGJN ;
WILLEMSEN, MFC ;
VANDERWIJGERT, WM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (04) :893-898
[8]   DISTRIBUTION OF IMPURITIES IN SEMI-INSULATING GAAS AFTER HEAT-TREATMENT IN HYDROGEN [J].
CLEGG, JB ;
SCOTT, GB ;
HALLAIS, J ;
MIRCEAROUSSEL, A .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :1110-1112
[9]   STUDY OF CR, SI AND MN DISTRIBUTION IN SEMI-INSULATING GAAS AFTER ANNEALING WITH AND WITHOUT SIO2 IN AN H2-AS4 ATMOSPHERE [J].
FENG, M ;
EU, V ;
KANBER, H ;
HENDERSON, WB .
JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (06) :973-986
[10]   INTERFACE STUDIES OF ALXGA1-XAS-GAAS HETEROJUNCTIONS [J].
GARNER, CM ;
SU, CY ;
SHEN, YD ;
LEE, CS ;
PEARSON, GL ;
SPICER, WE ;
EDWALL, DD ;
MILLER, D ;
HARRIS, JS .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3383-3389