GROWTH OF DEVICE-QUALITY GAN AT 550-DEGREES-C BY ATOMIC LAYER EPITAXY

GaN single crystal films were grown by atomic layer epitaxy at 550°C. The room temperature photoluminescence properties of these low-temperature-grown films are dominated by band edge emission with intensity comparable to those grown by metalorganic chemical vapor deposition at 1000°C. The as-grown films have background-carrier concentrations that can be controlled to levels in the 1016/cm-3 range. Atomic layer epitaxy is therefore a good approach to the low temperature growth of nitride compounds.© 1995 American Institute of Physics.