IMPURITY AND INTERFACIAL EFFECTS ON THE FORMATION OF AMORPHOUS SI FROM THE MELT

被引：5

作者：

CAMPISANO, SU

JACOBSON, DC

POATE, JM

CULLIS, AG

CHEW, NG

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 11期

关键词：

HEAT TREATMENT - Quenching - HEATING - Laser Applications - SEMICONDUCTOR MATERIALS - Amorphous;

D O I：

10.1063/1.95103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous Si has been formed from the melt by the uv laser heating of surface layers of single crystal (111) Si. The single crystals were doped with As, Bi, In, or Te to concentrations of approximately one part in 10**3. For the same quenching rates, the amorphous layers produced on the doped Si were substantially thicker than those on pure Si. Maximum amorphous thicknesses of 1200 A were obtained. The amorphization phenomena are correlated with melt depths and interfacial segregation effects.

引用

页码：1216 / 1218

页数：3

共 10 条

[1]

Baeri P., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P151

[2] INFLUENCE OF DOPING ON THE LIQUID-AMORPHOUS TRANSITION INDUCED BY PICOSECOND LASER IRRADIATION OF SI [J].