ANISOTROPIC PERCOLATION AND THE D-DIMENSIONAL SURFACE ROUGHENING PROBLEM

被引:30
作者
BULDYREV, SV
HAVLIN, S
STANLEY, HE
机构
[1] BOSTON UNIV, DEPT PHYS, BOSTON, MA 02215 USA
[2] BAR ILAN UNIV, DEPT PHYS, IL-52900 RAMAT GAN, ISRAEL
基金
美国国家科学基金会;
关键词
D O I
10.1016/0378-4371(93)90518-9
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We review recent numerical simulations of several models of interface growth in d-dimensional media with quenched disorder. These models belong to the universality class of anisotropic diode-resistor percolation networks. The values of the roughness exponent alpha = 0.63 +/- 0.01 (d = 1 + 1) and a = 0.48 +/- 0.02 (d = 2 + 1) are in good agreement with our recent experiments. The values of alpha in higher dimensions (alpha = 0.38 +/- 0.03 in d = 4 and alpha = 0.27 +/- 0.05 in d = 5) do not support a recent theoretical conjecture.
引用
收藏
页码:200 / 211
页数:12
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