DETECTION OF ULTRAVIOLET RADIATION USING SILICON CARBIDE P-N JUNCTIONS

[1] HIGH TEMPERATURE NUCLEAR PARTICLE DETECTOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1964, NS11 (03) : 262 - +

[2] CHANG HC, 1960, P C SIC, P496

[3] CHANG HC, 1964, ALTDR64253 AIR FORC

[4] CHOYKE WJ, 1960, P C SIC, P306

[5] GARASI L, 1964 EL DEV M WASH

[6] HAMILTON DR, 1960, P C SIC, P43

[7] LARACH S, 1965, PHOTOELECTRIC MATERI, P253

[8] BAND STRUCTURE EFFECTS IN PHOTOCONDUCTIVITY OF SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (03) : 495 - &

[9] RAPPAPORT P, 1965, PHOTOELECTRONIC MATE, P253

[10] SPECTRAL RESPONSE OF SOLAR-CELL STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1961, 2 (01) : 1 - 7

[1] HIGH TEMPERATURE NUCLEAR PARTICLE DETECTOR [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1964, NS11 (03) : 262 - +

[2] CHANG HC, 1960, P C SIC, P496

[3] CHANG HC, 1964, ALTDR64253 AIR FORC

[4] CHOYKE WJ, 1960, P C SIC, P306

[5] GARASI L, 1964 EL DEV M WASH

[6] HAMILTON DR, 1960, P C SIC, P43

[7] LARACH S, 1965, PHOTOELECTRIC MATERI, P253

[8] BAND STRUCTURE EFFECTS IN PHOTOCONDUCTIVITY OF SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (03) : 495 - &

[9] RAPPAPORT P, 1965, PHOTOELECTRONIC MATE, P253

[10] SPECTRAL RESPONSE OF SOLAR-CELL STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1961, 2 (01) : 1 - 7