11.6 GBPS 1-4 DEMULTIPLEXER USING DOUBLE PULSE DOPED QUANTUM-WELL GAAS/ALGAAS TRANSISTORS

被引:4
作者
LANG, M
NOWOTNY, U
BERROTH, M
机构
[1] Fraunhofer Institut fur Angewandte Festkörperphysik
关键词
INTEGRATED CIRCUITS; DEMULTIPLEXERS;
D O I
10.1049/el:19910289
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An ultrahigh speed 4 bit demultiplexer circuit has been developed and fabricated using a recessed gate process for enhancement and depletion transistors with 0.3-mu-m gate length. First results show a data rate of 11.6 Gbit/s and a power consumption of 165 mW at 0.85 V supply voltage, including four 50-OMEGA buffers.
引用
收藏
页码:459 / 460
页数:2
相关论文
共 3 条
[1]  
Berroth M., 1990, Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, P75
[2]  
ISHIDA K, 1989, GAAS IC SYMPOSIUM /, P317
[3]  
OHHATA M, 1989, INT S GAAS REL COMP, P887