PREPARATION AND PROPERTIES OF A CU-IN ALLOY PRECURSOR FOR CUINSE2 FILMS

被引：10

作者：

KUMAR, SR ^{[1
]}

GORE, RB ^{[1
]}

PANDEY, RK ^{[1
]}

机构：

[1] BHOPAL UNIV,DEPT PHYS,BHOPAL 462026,INDIA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1992年 / 26卷 / 1-2期

关键词：

D O I：

10.1016/0927-0248(92)90133-A

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We describe a new nonaqueous method to electrodeposit Cu-In alloy precursor for n-CuInSe2 films. The structural and compositional analysis of the Cu-In alloy carried out by X-ray diffraction and X-ray photoelectron spectroscopy have also been discussed. The stoichiometry of the films has been found to be influenced by the deposition potential. It is shown that a Cu-In alloy precursor with bulk Cu/In ratio of 1.00 can be electrodeposited at a potential of - 1.05 V (versus Pt). Flash annealing of the stacked Cu-In alloy/Se layers has been used to prepare CuInSe2 films. It is shown that the flashed n-CuInSe2 films have a chalcopyrite structure with strongly oriented (112) U planes.

引用

页码：149 / 158

页数：10

共 19 条

[1] SOLUTION GROWTH AND ELECTRODEPOSITED CULNSE2 THIN-FILMS [J].