NATURAL OXIDATION OF ANNEALED CHEMICALLY ETCHED POROUS SILICON

被引：24

作者：

ZOUBIR, NH

VERGNAT, M

DELATOUR, T

BURNEAU, A

DEDONATO, P

BARRES, O

机构：

[1] LAB CHIM PHYS ENVIRONNEMENT, CNRS, F-54600 VILLERS LES NANCY, FRANCE

[2] ECOLE NATL SUPER GEOL, ENVIRONNEMENT & MINERALURGIE LAB, CNRS, URA 235, F-54501 VANDOEUVRE LES NANCY, FRANCE

来源：

THIN SOLID FILMS | 1995年 / 255卷 / 1-2期

关键词：

LUMINESCENCE; OXIDATION; SILICON; THERMAL DESORPTION;

D O I：

10.1016/0040-6090(94)05659-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thermal annealing of porous silicon at 400 and 450 C leads to the desorption of hydrogen from the SiH2 sites and to the quenching of the photoluminescence. After exposure for 2 months to ambient air at 300 K, the photoluminescence is restored and becomes more intense than that of the as-etched sample. IR spectrometry and thermal desorption spectrometry show that it is the result of the passivation of the porous silicon surfaces by oxygen and water vapor.

引用

页码：228 / 230

页数：3

共 6 条

[1] INFRARED-SPECTROSCOPY OF SI(111) AND SI(100) SURFACES AFTER HF TREATMENT - HYDROGEN TERMINATION AND SURFACE-MORPHOLOGY [J].