FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY

被引：6

作者：

BACCHETTA, N

BISELLO, D

CANALI, C

DAROS, R

GIRALDO, A

GOTRA, Y

PACCAGNELLA, A

PIACENTINO, GM

VERZELLESI, G

机构：

[1] INFN,SEZ PADOVA,VIA MARZOLO 8,I-35131 PADUA,ITALY

[2] UNIV PADUA,DIPARTIMENTO FIS,I-35131 PADUA,ITALY

[3] UNIV MODENA,FAC INGN,I-41100 MODENA,ITALY

[4] UNIV CAGLIARI,IST ELETTROTECN,I-09123 CAGLIARI,ITALY

[5] UNIV CASSINO,FAC INGN,I-03403 CASSINO,ITALY

[6] INFN,SEZ BOLOGNA,I-40126 BOLOGNA,ITALY

[7] UNIV PADUA,DIPARTIMENTO ELETTRON & INFORMAT,I-35131 PADUA,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1994年 / 342卷 / 01期

关键词：

D O I：

10.1016/0168-9002(94)91408-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Radiation effects have been studied on single-sided FOXFET biased detectors and related test patterns. Radiation induced modifications of the electrical parameters and their thermal stability at room temperature and upon annealings have been studied for proton and gamma irradiations. The detector electrical characteristics have been correlated to Si bulk and surface damage, and to changes of the FOXFET properties. Interstrip resistance and capacitance have been investigated for gamma, p+ and n irradiations.

引用

收藏

页码：39 / 48

页数：10

相关论文

共 11 条

[1] FOXFET BIASSED MICROSTRIP DETECTORS [J].

ALLPORT, PP ;

CARTER, JR ;

GIBSON, V ;

GOODRICK, MJ ;

HILL, JC ;

KATVARS, SG ;

BULLOUGH, MA ;

GREENWOOD, NM ;

LUCAS, AD ;

WILBURN, CD ;

CARTER, AA ;

PRITCHARD, TW ;

NARDINI, L ;

SELLER, P ;

THOMAS, SL .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1991, 310 (1-2) :155-159

[2] RADIATION EFFECTS ON AC-COUPLED MICROSTRIP SILICON DETECTORS [J].

BACCHETTA, N ;

BISELLO, D ;

BOLLA, G ;

CANALI, C ;

FUOCHI, PG ;

PACCAGNELLA, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 326 (1-2) :381-385

[3] DOUBLE-SIDED READOUT SILICON STRIP DETECTORS FOR THE ALEPH MINIVERTEX [J].

BATIGNANI, G ;

BOSI, F ;

BOSISIO, L ;

CONTI, A ;

FOCARDI, E ;

FORTI, F ;

GIORGI, MA ;

PARRINI, G ;

SCARLINI, E ;

TEMPESTA, P ;

TONELLI, G ;

TRIGGIANI, G .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1989, 277 (01) :147-153

[4] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J].

BOESCH, HE ;

MCGARRITY, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) :1520-1525

[5] THERMALLY STIMULATED AND LEAKAGE CURRENT ANALYSIS OF NEUTRON-IRRADIATED SILICON DETECTORS [J].

BORCHI, E ;

BRUZZI, M ;

MAZZONI, MS .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1991, 310 (1-2) :273-276

[6] A SI STRIP DETECTOR WITH INTEGRATED COUPLING CAPACITORS [J].

CACCIA, M ;

EVENSEN, L ;

HANSEN, TE ;

HORISBERGER, R ;

HUBBELING, L ;

PEISERT, A ;

TUUVA, T ;

WEILHAMMER, P ;

ZALEWSKA, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1987, 260 (01) :124-131

[7] OPERATION AND RADIATION-RESISTANCE OF A FOXFET BIASING STRUCTURE FOR SILICON STRIP DETECTORS [J].

LAAKSO, M ;

SINGH, P ;

ENGELS, E ;

SHEPARD, PF .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 326 (1-2) :214-221

[8] POSTIRRADIATION BEHAVIOR OF THE INTERFACE STATE DENSITY AND THE TRAPPED POSITIVE CHARGE [J].

STAHLBUSH, RE ;

MRSTIK, BJ ;

LAWRENCE, RK .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1990, 37 (06) :1641-1649

[9] TIME-DEPENDENT ANNEALING OF RADIATION-INDUCED LEAKAGE CURRENTS IN MOS DEVICES [J].

TERRELL, JM ;

OLDHAM, TR ;

LELIS, AJ ;

BENEDETTO, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (06) :2205-2211

[10]

VERZELLESI G, UNPUB