KINK POWER IN WEAKLY INDEX-GUIDED SEMICONDUCTOR-LASERS

被引：52

作者：

SCHEMMANN, MFC ^{[1
]}

VANDERPOEL, CJ ^{[1
]}

VANBAKEL, BAH ^{[1
]}

AMBROSIUS, HPMM ^{[1
]}

VALSTER, A ^{[1
]}

VANDENHEIJKANT, JAM ^{[1
]}

ACKET, GA ^{[1
]}

机构：

[1] PHILIPS RES LABS,PHILIPS OPTOELECTR CTR,5656 AA EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.113597

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A periodic dependence of kink power on laser length is observed and explained. Weakly index guided high power stripe lasers in the AlGaAs, InGaAlP, and InGaAs-AlGaAs material systems are studied and oscillation periods of 100-350 μm are found. Relative kink power differences exceeding a factor of 4 are observed. Facet coatings lead to differences in the oscillation amplitude but not in the oscillation period. The observations indicate that phase-locked fundamental and first-order modes exist at certain preferred laser lengths. This general model fully explains the oscillatory behavior of the kink power and the correlated changes in lateral far field distributions at the front and rear mirrors. It is concluded that the optimum diffraction limited power output can be obtained by choosing the proper laser length.© 1995 American Institute of Physics.

引用

页码：920 / 922

页数：3

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