1-F NOISE IN THERMO EMF OF INTRINSIC AND EXTRINSIC SEMICONDUCTORS

被引：64

作者：

KLEINPENNING, TG ^{[1
]}

机构：

[1] TH EINDHOVEN, AFDELING ELEKTROTECHN, EINDHOVEN, NETHERLANDS

来源：

PHYSICA | 1974年 / 77卷 / 01期

关键词：

D O I：

10.1016/0031-8914(74)90277-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：78 / 98

页数：21

共 16 条

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[3] HOOGE FN, 1971, PHILIPS RES REP, V26, P77
[4] DISCUSSION OF RECENT EXPERIMENTS ON 1/F NOISE
HOOGE, FN
[J]. PHYSICA, 1972, 60 (01): : 130 - +
[5] 1/F NOISE IS NO SURFACE EFFECT
HOOGE, FN
[J]. PHYSICS LETTERS A, 1969, A 29 (03) : 139 - &
[6] HOOGE FN, 1971, PHILIPS RES REP, V26, P345
[7] HOPPENBR.AM, 1970, PHILIPS RES REP, V25, P69
[8] JAIN GC, 1967, PROPERTIES ELECTRICA
[9] MCWORTHER AL, 1957, SEMICONDUCTOR SURFAC, P207
[10] NOISE OF ILLUMINATED SILICON SINGLE CRYSTALS WITHOUT ELECTRIC FIELD
SCHRENK, H
WAIDELICH, W
[J]. PHYSICA STATUS SOLIDI, 1969, 32 (01): : K99 - +