DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION

被引：7

作者：

BACCHETTA, N

BISELLO, D

CANALI, C

FUOCHI, PG

GOTRA, Y

PACCAGNELLA, A

VERZELLESI, G

机构：

[1] UNIV PADUA,DIPARTIMENTO FIS,I-35131 PADUA,ITALY

[2] UNIV MODENA,FAC INGN,I-41100 MODENA,ITALY

[3] CNR,FRAE,I-40126 BOLOGNA,ITALY

[4] UNIV PADUA,DIPARTIMENTO ELETTR & INFORMAT,I-35131 PADUA,ITALY

[5] UNIV NEW MEXICO,ALBUQUERQUE,NM 87131

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/23.273452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results are presented showing the radiation response of ac-coupled FOXFET biased microstrip detectors and related test patterns to be used in the microvertex detector of the CDF experiment at Fermi National Laboratory. Radiation tolerance of detectors to gamma and proton irradiation has been tested and the radiation induced variations of the dc electrical parameters have been analyzed. Long term post-irradiation behaviour of detector characteristics have been studied, and the relevant room temperature annealing phenomena have been discussed.

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页码：2001 / 2007

页数：7

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