CATHODIC DEPOSITION OF TERNARY IN+AS+SB ALLOYS AND FORMATION OF INASXSB1-X

被引:6
作者
CATTARIN, S
MUSIANI, MM
CASELLATO, U
GUERRIERO, P
BERTONCELLO, R
机构
[1] CNR,ICTIMA,I-35020 PADUA,ITALY
[2] DIP CIMA,I-35100 PADUA,ITALY
来源
JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1995年 / 380卷 / 1-2期
关键词
THIN-FILM SEMICONDUCTORS; CATHODIC DEPOSITION; IN+AS+SB ALLOYS; INASXSB1-X;
D O I
10.1016/0022-0728(94)03604-2
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In + As + Sb alloys have been deposited onto Ni and Ti cathodes from tartaric acid solutions at pH 2. Homogeneous deposits of composition suitable for achieving InAsxSb1-x can be obtained from this medium. The As-to-Sb ratio can be controlled by properly selecting solution composition and deposition potential. X-ray photoelectron spectroscopy and X-ray diffraction analyses show that formation of III-V compounds occurs at room temperature. In reacts preferentially with As rather than with Sb, but crystalline phases formed at room temperature are Sb-rich. After annealing the In + As + Sb alloys at 250 degrees C, the composition calculated from cell parameters appears similar to that measured by energy-dispersive X-ray analysis, suggesting that the entire deposit has been converted into the InAsxSb1-x crystalline phase.
引用
收藏
页码:209 / 218
页数:10
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