MONOLITHIC INTEGRATION OF AN INGAASP/INP LASER DIODE WITH HETEROJUNCTION BIPOLAR-TRANSISTORS

[1] INOUE K, 1983 IOOC TOK, P186

[2] MONOLITHIC INTEGRATION OF A VERY LOW THRESHOLD GAINASP LASER AND METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON SEMI-INSULATING INP [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 643 - 645

[3] KOREN U, 1982, IEEE J QUANTUM ELECT, V18, P1653, DOI 10.1109/TMTT.1982.1131303

[4] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[5] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J]. ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355

[6] MATSUEDA H, 1983, J LIGHTWAVE TECHNOL, V1, P368

[7] MONOLITHIC INTEGRATION OF AN ALGAAS GAAS DH LED WITH A GAAS-FET DRIVER [J]. ELECTRON DEVICE LETTERS, 1982, 3 (10): : 305 - 307

[1] INOUE K, 1983 IOOC TOK, P186

[2] MONOLITHIC INTEGRATION OF A VERY LOW THRESHOLD GAINASP LASER AND METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON SEMI-INSULATING INP [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 643 - 645

[3] KOREN U, 1982, IEEE J QUANTUM ELECT, V18, P1653, DOI 10.1109/TMTT.1982.1131303

[4] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[5] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J]. ELECTRONICS LETTERS, 1980, 16 (10) : 353 - 355

[6] MATSUEDA H, 1983, J LIGHTWAVE TECHNOL, V1, P368

[7] MONOLITHIC INTEGRATION OF AN ALGAAS GAAS DH LED WITH A GAAS-FET DRIVER [J]. ELECTRON DEVICE LETTERS, 1982, 3 (10): : 305 - 307