RESONANT RAMAN-SCATTERING AT THE SADDLE-POINT SINGULARITY IN INXGA1-XAS

被引：25

作者：

JAIN, KP ^{[1
]}

SONI, RK ^{[1
]}

ABBI, SC ^{[1
]}

BALKANSKI, M ^{[1
]}

机构：

[1] UNIV PARIS 06,PHYS SOLIDE LAB,F-75230 PARIS 05,FRANCE

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.32.1005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1005 / 1008

页数：4

共 17 条

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[7]

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[8] RESONANT RAMAN-SCATTERING AT CRITICAL-POINTS OF SEMICONDUCTORS [J].

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[9] RESONANT RAMAN-SCATTERING IN MIXED GAAS1-XPX CRYSTALS [J].

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[10]

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