NEGATIVE-ION IMPLANTATION TECHNIQUE

被引：102

作者：

ISHIKAWA, J ^{[1
]}

TSUJI, H ^{[1
]}

TOYOTA, Y ^{[1
]}

GOTOH, Y ^{[1
]}

MATSUDA, K ^{[1
]}

TANJYO, M ^{[1
]}

SAKAI, S ^{[1
]}

机构：

[1] NISSHIN ELECT CO LTD,DIV R&D,MINAMI KU,KYOTO 601,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 96卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(94)00444-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Negative-ion implantation is a promising technique for charging-free implantation for the forthcoming ULSI fabrication, in which the wafer charging by positive-ion implantation will become a troublesome problem even with an electron shower. The negative-ion implantation technique remarkably ameliorates such a charging problem since the incoming negative charge of implanted negative ions is easily balanced by the outgoing negative charge of a part of secondary electrons. Thus, the surface charging voltage is maintained to within about +/-10 V for isolated conducting materials and insulators, and is free from space and time fluctuations. A high-current negative-ion source and a medium current negative-ion implanter developed for this technique are described with the design concepts. In addition, the fundamental measurements of interactions between the negative-ion beam and the gas/solid are also described.

引用

页码：7 / 12

页数：6

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