A THEORETICAL-ANALYSIS OF THE RELAXATION OF AN OPEN-CIRCUIT PHOTOPOTENTIAL IN A HIGHLY BIASED N-TYPE SEMICONDUCTOR ELECTRODE .1. NO INTERFACIAL ELECTRON OR HOLE TRANSFER

被引：29

作者：

GOTTESFELD, S ^{[1
]}

FELDBERG, SW ^{[1
]}

机构：

[1] BROOKHAVEN NATL LAB,DEPT ENERGY & ENVIRONM,DIV CHEM SCI,UPTON,NY 11973

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1983年 / 146卷 / 01期

关键词：

D O I：

10.1016/S0022-0728(83)80112-0

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

收藏

页码：47 / 69

页数：23

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