EFFECT OF TEMPERATURE-DEPENDENT BAND SHIFTS ON SEMICONDUCTOR TRANSPORT PROPERTIES

被引：38

作者：

EMIN, D ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

关键词：

D O I：

10.1016/0038-1098(77)90113-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：409 / 411

页数：3

共 8 条

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[3] PRESSURE DEPENDENCE OF OPTICAL GAP IN CRYSTALLINE AND AMORPHOUS ARSENIC TRISELENIDE
GRANT, AJ
YOFFE, AD
[J]. SOLID STATE COMMUNICATIONS, 1970, 8 (22) : 1919 - &
[4] Heikes RR, 1961, THERMOELECTRICITY SC
[5] COMPOSITIONAL TRENDS IN OPTICAL PROPERTIES OF AMORPHOUS LONE-PAIR SEMICONDUCTORS
KASTNER, M
[J]. PHYSICAL REVIEW B, 1973, 7 (12): : 5237 - 5252
[6] MOTT NF, 1971, ELECTRONIC PROCESSES
[7] PHILLIPS JC, 1973, BONDS BANDS SEMICOND, P150
[8] STREET RA, 1974, J PHYS C, V1, P1582