Spill relaxation of electrons in strained-GaAs-Layer photocathode of polarized electron source

被引：15

作者：

Horinaka, H

Ono, D

Zhen, WD

Wada, K

Cho, Y

Hayashi, Y

Nakanishi, T

Okumi, S

Aoyagi, H

Saka, T

Kato, T

机构：

[1] UNIV OSAKA PREFECTURE,COLL INTEGRATED ARTS & SCI,SAKAI,OSAKA 593,JAPAN

[2] NAGOYA UNIV,DEPT PHYS,NAGOYA,AICHI 464,JAPAN

[3] DAIDO STEEL CO LTD,NEW MAT RES LAB,NAGOYA,AICHI 457,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 12A期

关键词：

spin relaxation; luminescence polarization; strained layer; polarized electron source; spin-polarized electrons; time-resolved measurement;

D O I：

10.1143/JJAP.34.6444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The luminescence polarization method using a mode-locked Ti:sapphire laser and a streak camera. is applied to the measurement of the spin relaxation time and the lifetime of electrons in the strained-GaAs-layer photocathode of a polarized electron source. The spin relaxation time and the electron lifetime are 105 ps and 45 ps at room temperature, respectively. Electron-hole scattering is thought to be the main mechanism of the spin relaxation of our strained-GaAs photocathode.

引用

页码：6444 / 6447

页数：4

共 11 条

[1] STRAIN DEPENDENCE OF SPIN POLARIZATION OF PHOTOELECTRONS FROM A THIN GAAS LAYER [J].