ELECTRON MOBILITIES IN IN0.2GA0.8AS/GAAS STRAINED-LAYER SUPER-LATTICES

被引：50

作者：

FRITZ, IJ

DAWSON, LR

ZIPPERIAN, TE

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 09期

关键词：

D O I：

10.1063/1.94523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：846 / 848

页数：3

共 23 条

[1]

BIEFELD RM, UNPUB

[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J].

DINGLE, R ;

STORMER, HL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :665-667

[3] PHOTOCURRENT SPECTROSCOPY OF A STRAINED-LAYER SUPER-LATTICE [J].

FRITZ, IJ ;

BIEFELD, RM ;

OSBOURN, GC .

SOLID STATE COMMUNICATIONS, 1983, 45 (04) :323-325

[4]

FRITZ IJ, 1983, 1982 P I S GAAS REL, P241

[5] GROWTH AND PHOTO-LUMINESCENCE CHARACTERIZATION OF A GAASXP1-X/GAP STRAINED-LAYER SUPER-LATTICE [J].

GOURLEY, PL ;

BIEFELD, RM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :473-475

[6]

GOURLEY PL, 1983, 10TH P INT S GAAS RE, P249

[7]

GOURLEY PL, 1983, B AM PHYS SOC, V28, P489

[8] SIMPLE EMPIRICAL RELATIONSHIP BETWEEN MOBILITY AND CARRIER CONCENTRATION [J].

HILSUM, C .

ELECTRONICS LETTERS, 1974, 10 (13) :259-260

[9] CONTINUOUS 300-K LASER OPERATION OF STRAINED SUPER-LATTICES [J].

LUDOWISE, MJ ;

DIETZE, WT ;

LEWIS, CR ;

CAMRAS, MD ;

HOLONYAK, N ;

FULLER, BK ;

NIXON, MA .

APPLIED PHYSICS LETTERS, 1983, 42 (06) :487-489

[10] STIMULATED-EMISSION IN STRAINED GAAS1-XPX-GAAS1-YPY SUPER-LATTICES [J].

LUDOWISE, MJ ;

DIETZE, WT ;

LEWIS, CR ;

HOLONYAK, N ;

HESS, K ;

CAMRAS, MD ;

NIXON, MA .

APPLIED PHYSICS LETTERS, 1983, 42 (03) :257-259

← 1 2 3 →