ELECTRICAL AND OPTICAL EVIDENCE OF RESONANT TUNNELING OF HOLES IN AN N+N+ DOUBLE-BARRIER DIODE STRUCTURE UNDER ILLUMINATION

被引：29

作者：

VODJDANI, N

COTE, D

THOMAS, D

SERMAGE, B

BOIS, P

COSTARD, E

NAGLE, J

机构：

[1] Laboratoire Central de Recherches, Thomson-CSF, 91404, Orsay Cedex, Domaine de Corbeville

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 01期

关键词：

D O I：

10.1063/1.102638

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using low-temperature photocurrent, steady-state and time-resolved photoluminescence, we have shown the importance of hole transport in the optical properties of n+in+ double-barrier diodes under operation. We have also seen evidence of resonant tunneling of minority holes in such an illuminated double-barrier diode.

引用

收藏

页码：33 / 35

页数：3

相关论文

共 11 条

[1] CALCULATION OF PHONON-ASSISTED TUNNELING AND VALLEY CURRENT IN A DOUBLE-BARRIER DIODE [J].

CHEVOIR, F ;

VINTER, B .

APPLIED PHYSICS LETTERS, 1989, 55 (18) :1859-1861

[2] OPTICAL STUDIES OF A GAAS QUANTUM-WELL BASED FIELD-EFFECT TRANSISTOR [J].

DELALANDE, C ;

ORGONASI, J ;

BRUM, JA ;

BASTARD, G ;

VOOS, M ;

WEIMANN, G ;

SCHLAPP, W .

APPLIED PHYSICS LETTERS, 1987, 51 (17) :1346-1348

[3] PHOTOLUMINESCENT DETERMINATION OF CHARGE ACCUMULATION IN RESONANT TUNNELING STRUCTURES [J].

FRENSLEY, WR ;

REED, MA ;

LUSCOMBE, JH .

PHYSICAL REVIEW LETTERS, 1989, 62 (10) :1207-1207

[4] EVIDENCE FOR LO-PHONON-EMISSION-ASSISTED TUNNELING IN DOUBLE-BARRIER HETEROSTRUCTURES [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW B, 1987, 36 (14) :7635-7637

[5] RESONANT TUNNELING OF HOLES IN ALAS-GAAS-ALAS HETEROSTRUCTURES [J].

MENDEZ, EE ;

WANG, WI ;

RICCO, B ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :415-417

[6] TUNNELING ESCAPE TIME OF ELECTRONS FROM A QUANTUM WELL UNDER THE INFLUENCE OF AN ELECTRIC-FIELD [J].

NORRIS, TB ;

SONG, XJ ;

SCHAFF, WJ ;

EASTMAN, LF ;

WICKS, G ;

MOUROU, GA .

APPLIED PHYSICS LETTERS, 1989, 54 (01) :60-62

[7] TUNNELING ESCAPE RATE OF ELECTRONS FROM QUANTUM-WELL IN DOUBLE-BARRIER HETEROSTRUCTURES [J].

TSUCHIYA, M ;

MATSUSUE, T ;

SAKAKI, H .

PHYSICAL REVIEW LETTERS, 1987, 59 (20) :2356-2359

[8] PHOTOLUMINESCENCE AND SPACE-CHARGE DISTRIBUTION IN A DOUBLE-BARRIER DIODE UNDER OPERATION [J].

VODJDANI, N ;

CHEVOIR, F ;

THOMAS, D ;

COTE, D ;

BOIS, P ;

COSTARD, E ;

DELAITRE, S .

APPLIED PHYSICS LETTERS, 1989, 55 (15) :1528-1530

[9] PICOSECOND SWITCHING TIME MEASUREMENT OF A RESONANT TUNNELING DIODE [J].

WHITAKER, JF ;

MOUROU, GA ;

SOLLNER, TCLG ;

GOODHUE, WD .

APPLIED PHYSICS LETTERS, 1988, 53 (05) :385-387

[10] DETERMINATION OF CHARGE ACCUMULATION AND ITS CHARACTERISTIC TIME IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES USING STEADY-STATE PHOTOLUMINESCENCE [J].

YOUNG, JF ;

WOOD, BM ;

AERS, GC ;

DEVINE, RLS ;

LIU, HC ;

LANDHEER, D ;

BUCHANAN, M ;

SPRINGTHORPE, AJ ;

MANDEVILLE, P .

PHYSICAL REVIEW LETTERS, 1988, 60 (20) :2085-2088