THE METAL-INSULATOR-TRANSITION - COMPLEXITY IN A SIMPLE SYSTEM

被引:23
作者
ASHCROFT, NW [1 ]
机构
[1] CNRS, LEPES, F-38042 GRENOBLE, FRANCE
关键词
D O I
10.1016/0022-3093(93)90035-V
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In 1949, Mott introduced a monatomic array of hydrogen atoms rigidly fixed to the sites of a cubic lattice as a model system with which to address the many-body physics of the metal-insulator transition. Hydrogen, in nature, does not conform to this model (the monatomic constraint is not met) but nevertheless hydrogen presents a system in which many of the major ideas post-dating Mott's paper are clearly manifested. The pairing of protons implies necessarily an even number of electrons per cell in crystalline phases, and hence the possibility of band-overlap metallization at sufficiently high density. However, the protons are highly quantum mechanical in their own right, and they possess non-trivial dynamics both translational and librational (and even rotational). On electronic timescales, the latter lead in the one-electron picture to a site-disorder problem and the possible emergence of localization phenomena. However, it is dynamic localization slaved to proton timescales, and a better view of the problem is one which treats electrons and protons on the same footing, a point of view that leads to the notion of pair localization and de-localization.
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页码:621 / 630
页数:10
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