LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ALN OVER SAPPHIRE SUBSTRATES

被引：96

作者：

KHAN, MA ^{[1
]}

KUZNIA, JN ^{[1
]}

SKOGMAN, RA ^{[1
]}

OLSON, DT ^{[1
]}

MACMILLAN, M ^{[1
]}

CHOYKE, WJ ^{[1
]}

机构：

[1] UNIV PENNSYLVANIA,PITTSBURGH,PA 15260

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 21期

关键词：

D O I：

10.1063/1.108144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we report the deposition of high quality single-crystal films of AIN over basal plane sapphire substrates. A conventional low pressure metalorganic chemical vapor deposition (LPMOCVD) system was used for all the growths reported here. We present the results of conventional and switched atomic layer epitaxial (SALE) depositions. Conventional LPMOCVD yielded single-crystal AIN films at temperatures in excess of 750-degrees-C. The ALE process in contrast produced extremely smooth single-crystal AIN layers at temperatures as low as 450-degrees-C. To the best of our knowledge this is the lowest ever reported for chemical vapor deposition of single-crystal AIN. X-ray and optical characterization data are presented to compare the quality of the material resulting from the two deposition techniques.

引用

页码：2539 / 2541

页数：3

共 8 条

[1] STIMULATED-EMISSION NEAR ULTRAVIOLET AT ROOM-TEMPERATURE FROM A GAN FILM GROWN ON SAPPHIRE BY MOVPE USING AN AIN BUFFER LAYER [J].