A NUMERICAL APPROACH TO MODELING THE ULTRASHORT-GATE MESFET

被引：12

作者：

HIGGINS, JA ^{[1
]}

PATTANAYAK, DN ^{[1
]}

机构：

[1] ROCKWELL INT,MICROELECTR RES & DEV,ANAHEIM,CA 92803

来源：

关键词：

D O I：

10.1109/T-ED.1982.20680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：179 / 183

页数：5

共 10 条

[1] BREWITTTAYLOR CR, 1979, 1 P NASECODE C DUBL, P191
[2] Frey J., 1980, International Electron Devices Meeting. Technical Digest, P613
[3] EFFECTS OF INTERVALLEY SCATTERING ON NOISE IN GAAS AND INP FIELD-EFFECT TRANSISTORS
FREY, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) : 1298 - 1303
[4] HIGGINS JA, 1980, IEEE T ELECTRON DEV, V27, P1066, DOI 10.1109/T-ED.1980.19988
[5] HUANG C, 1981 IEEE MTT S DIG, P25
[6] HOT-ELECTRON RELAXATION EFFECTS IN DEVICES
KROEMER, H
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (01) : 61 - 67
[7] TRANSIENT AND STEADY-STATE ELECTRON-TRANSPORT PROPERTIES OF GAAS AND INP
MALONEY, TJ
FREY, J
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) : 781 - 787
[8] MOLL JL, 1964, PHYSICS SEMICONDUCTO, P136
[9] Pattanayak D. N., 1980, International Electron Devices Meeting. Technical Digest, P260
[10] WASSERSTROM E, 1970, BELL SYST TECH J MAY