学术探索
学术期刊
新闻热点
数据分析
智能评审

TRANSIT TIME EFFECTS IN SPACE-CHARGE-LIMITED SILICON MICROWAVE DIODE

被引：27
作者：
WRIGHT, GT
机构：
来源：
SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 01期
关键词：
D O I：
10.1016/0038-1101(66)90017-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1 / &
相关论文
共 8 条
[1]  
Benham WE, 1928, PHILOS MAG, V5, P641
[2]   CHARACTERISTICS OF THE DIELECTRIC DIODE AND TRIODE AT VERY HIGH FREQUENCIES [J].
BROJDO, S .
SOLID-STATE ELECTRONICS, 1963, 6 (06) :611-629
[3]   Operation of ultra-high-frequency vacuum tubes [J].
Llewellyn, FB .
BELL SYSTEM TECHNICAL JOURNAL, 1935, 14 :632-665
[4]  
MOTT N, 1940, ELECTRONIC PROCESSES, P169
[5]   SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS [J].
ROSE, A .
PHYSICAL REVIEW, 1955, 97 (06) :1538-1544
[6]   CHARACTERISTICS OF THE SPACE-CHARGE-LIMITED DIELECTRIC DIODE AT VERY HIGH FREQUENCIES [J].
SHAO, J ;
WRIGHT, GT .
SOLID-STATE ELECTRONICS, 1961, 3 (3-4) :291-303
[7]   SPACE-CHARGE LIMITED CURRENTS IN INSULATING MATERIALS [J].
WRIGHT, GT .
NATURE, 1958, 182 (4645) :1296-1297
[8]   MECHANISMS OF SPACE-CHARGE-LIMITED CURRENT IN SOLIDS [J].
WRIGHT, GT .
SOLID-STATE ELECTRONICS, 1961, 2 (2-3) :165-189
1