CRITICAL KOEHLER ILLUMINATION FOR SHAPED BEAM LITHOGRAPHY

被引:12
作者
ESSIG, M [1 ]
PFEIFFER, HC [1 ]
机构
[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 01期
关键词
ELECTRON BEAMS - Applications - ELECTRON GUNS - Applications - ELECTRONS - Emission - INTEGRATED CIRCUITS; VLSI; -; Fabrication;
D O I
10.1116/1.583399
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The crossover of a thermionic electron gun acts as the virtual source in conventional electron beam lithography systems employing critical illumination as well as those employing Koehler illumination The concept of critical Koehler illumination combines critical illumination and Koehler illumination to image the cathode surface as the real source of the electrons into the probe shaping aperture and finally onto the target plane (window ray trace). Further on, the crossover as the virtual exit pupil of the gun lens is imaged into the entrance pupil of the final lens (pupil ray trace). Thus, in critical Koehler illumination, the linked beam concept consequently correlates conjugate planes of a probe forming system to those of the electron gun. The implementation of critical Koehler illumination in shaped beam lithography systems requires a special imaging mode of the electron gun. A typical triode gun can provide imaging of the emitter surface. Critical Koehler illumination has a high current efficiency, and the cathode supplies only the number of electrons needed in the target plane, so that maximum cathode lifetime and minimum electron-electron interaction in the beam result. Beam stability and spot image quality are substantially improved.
引用
收藏
页码:83 / 85
页数:3
相关论文
共 3 条
[1]  
BROERS AN, 1979, SCANNING ELECTRON MI, V1, P1
[2]  
Essig M., 1984, IBM Technical Disclosure Bulletin, V27, P1224
[3]  
PFEIFFER HC, 1970, 8TH INT EL MICR C GR, V2, P63