EFFECT OF HYDROGEN WATER ATMOSPHERES ON CORROSION AND FLEXURAL STRENGTH OF SINTERED ALPHA-SILICON CARBIDE

被引:29
作者
KIM, HE
MOORHEAD, AJ
机构
[1] Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
关键词
corrosion; hydrogen; silicon carbide; strength; water;
D O I
10.1111/j.1151-2916.1990.tb06574.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Sintered α‐SiC was exposed for 10 h to H2 containing various partial pressures of H2O (PH2O from 5×10−6 to 2×10−2 atm; 1 atm≅105 Pa) at 1300° and 1400°C. Weight loss, surface morphology, and room‐temperature flexural strength were strongly dependent on PH2O. The strength of the SiC was not significantly affected by exposure to dry H2 at a PH2O of 5×10−6 atm; and following exposure at PH2O >5×10−3 atm, the strength was even higher than that of the as‐received material. The increase in strength is thought to be the result of crack blunting associated with SiO2 formation at crack tips. However, after exposure in an intermediate range of water vapor pressures (1×10−5<PH2O <1×10−3 atm), significant decreases in strength were observed. At a PH2O of about 1×10−4 atm, the flexural strength decreased approximately 30% and 50% after exposure at 1300° and 1400°C, respectively. The decrease in strength is attributed to surface defects caused by corrosion in the form of grain‐boundary attack and the formation of pits. The rates of weight loss and microstructural changes on the exposed surfaces correlated well with the observed strength changes. Copyright © 1990, Wiley Blackwell. All rights reserved
引用
收藏
页码:694 / 699
页数:6
相关论文
共 21 条
[1]   ACTIVE TO PASSIVE TRANSITION IN OXIDATION OF SIC [J].
ANTILL, JE ;
WARBURTON, JB .
CORROSION SCIENCE, 1971, 11 (06) :337-+
[2]  
BECHER PF, 1983, J AM CERAM SOC, V66
[3]  
BESSAN T, 1977, ORNLTM5775 REP
[4]  
BROWNING R, 1987, ADV CERAM MATER, V2, P773
[5]  
BURKE JJ, 1974, CERAMICS HIGH PERFOR
[6]  
BURKE JJ, 1977, CERAMICS HIGH PERFOR
[7]   CHEMICAL ETCHING OF SILICON CARBIDE WITH HYDROGEN [J].
CHU, TL ;
CAMPBELL, RB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (09) :955-&
[8]   OXIDATION-KINETICS OF SILICON-CARBIDE CRYSTALS AND CERAMICS .1. IN DRY OXYGEN [J].
COSTELLO, JA ;
TRESSLER, RE .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1986, 69 (09) :674-681
[9]  
DAVIS RF, 1984, SCAN ELECTRON MICROS, P1161
[10]   STRENGTH DISTRIBUTIONS OF SIC CERAMICS AFTER OXIDATION AND OXIDATION UNDER LOAD [J].
EASLER, TE ;
BRADT, RC ;
TRESSLER, RE .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1981, 64 (12) :731-734