SYSTEMATIC STUDY OF THE SURFACE PHOTOVOLTAIC EFFECT IN PHOTOEMISSION

被引：18

作者：

BAUER, A

PRIETSCH, M

MOLODTSOV, S

LAUBSCHAT, C

KAINDL, G

机构：

[1] Institut F̈r Experimentalphysik, Freie Universität Berlin, D-1000 Berlin 33

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.44.4002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of a surface photovoltage on band bending determined by photoemission were investigated experimentally and theoretically for Cs on p-type GaAs(110). Calculations based on carrier recombination by thermionic emission as well as tunneling are in excellent agreement with experimental data. Surface photovoltages are found to contribute noticeably only in the case of low dopant concentrations n and low temperatures T (n < 10(18)/cm3 and T < 280 K for a Schottky-barrier height of 0.7 eV). General criteria for the influence of surface photovoltages in photoemission studies of Schottky contacts are established.

引用

页码：4002 / 4005

页数：4

共 14 条

[1] PHOTOVOLTAIC EFFECTS IN TEMPERATURE-DEPENDENT FERMI-LEVEL MOVEMENT FOR GAAS(110) [J].