LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION

被引：72

作者：

HERSEE, SD

DUCHEMIN, JP

机构：

来源：

ANNUAL REVIEW OF MATERIALS SCIENCE | 1982年 / 12卷

关键词：

D O I：

10.1146/annurev.ms.12.080182.000433

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：65 / 80

页数：16

共 16 条

[1]

Duchemin J. P., 1977, Revue Technique Thomson-CSF, V9, P33

[2]

DUCHEMIN JP, 1978, I PHYS C SER, V45, P10

[3]

DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637

[4] PREPARATION AND PROPERTIES OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (03) :128-135

[5]

GILLING LJ, 1981, 8 P INT C CVD, P199

[6] A NEW APPROACH TO THE GETTERING OF OXYGEN DURING THE GROWTH OF GAALAS BY LOW-PRESSURE MOCVD [J].

HERSEE, SD ;

DIFORTEPOISSON, MA ;

BALDY, M ;

DUCHEMIN, JP .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :53-57

[7] A LOW-BEAM-DIVERGENCE CW (GAAL)AS DOUBLE-HETEROSTRUCTURE LASER GROWN BY LOW-PRESSURE METALLORGANIC CHEMICAL VAPOR-DEPOSITION PROCESS [J].

HIRTZ, JP ;

BUIDINHVUONG ;

DUCHEMIN, JP ;

HIRTZ, P ;

CREMOUX, BD ;

BISARO, R ;

MERENDA, P ;

BONNET, M ;

DUDA, E ;

MESQUIDA, G ;

CARBALLES, JC .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :795-796

[8] GAXIN1-XASVP1-V-INP DH LASER EMITTING AT 1.15 MU-M GROWN BY LOW-PRESSURE METALORGANIC CVD [J].

HIRTZ, JP ;

DUCHEMIN, JP ;

HIRTZ, P ;

CREMOUX, BD ;

PEARSALL, T ;

BONNET, M .

ELECTRONICS LETTERS, 1980, 16 (08) :275-277

[9]

HIRTZ JP, 1980, I PHYS C SER, V56, P29

[10]

MANASEVIT HM, 1979, J ELECTROCHEM SOC, V126, P2031, DOI 10.1149/1.2128849

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