INVESTIGATION OF INTERFACIAL REACTIONS BETWEEN THIN-FILMS OF GOLD AND SUBSTRATES OF GALLIUM-ARSENIDE BY TRANSMISSION ELECTRON-MICROSCOPY

被引:12
作者
BAUER, CL
机构
关键词
D O I
10.1016/0039-6028(86)90869-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:395 / 403
页数:9
相关论文
共 6 条
[1]   HIGH-TEMPERATURE ANNEALING BEHAVIOR OF SCHOTTKY BARRIERS ON GAAS WITH GOLD AND GOLD-GALLIUM CONTACTS [J].
GUHA, S ;
ARORA, BM ;
SALVI, VP .
SOLID-STATE ELECTRONICS, 1977, 20 (05) :431-&
[2]   PHYSIOCHEMICAL EFFECTS OF HEATING GOLD THIN-FILMS ON GALLIUM-ARSENIDE [J].
LEUNG, S ;
WONG, LK ;
CHUNG, DDL ;
MILNES, AG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :462-468
[3]  
LEUNG S, 1985, J ELECTROCHEM SOC, V132, P898, DOI 10.1149/1.2113981
[4]  
LINCE JR, THIN SOLID FILMS
[5]   INTERFACIAL REACTIONS BETWEEN GOLD THIN-FILMS AND GAAS SUBSTRATES [J].
YOSHIIE, T ;
BAUER, CL ;
MILNES, AG .
THIN SOLID FILMS, 1984, 111 (02) :149-166
[6]   ORIENTATION RELATIONSHIPS BETWEEN THIN-FILMS OF AU, (100) SUBSTRATES OF GAAS, AND THEIR REACTION-PRODUCTS [J].
YOSHIIE, T ;
BAUER, CL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :554-557