NOVEL VERY SENSITIVE ANALYTICAL TECHNIQUE FOR COMPOSITIONAL ANALYSIS OF HG1-XCDXTE EPILAYERS

被引：28

作者：

BUBULAC, LO ^{[1
]}

VISWANATHAN, CR ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,LOS ANGELES,CA 90024

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 02期

关键词：

D O I：

10.1063/1.106970

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports a novel analytical method using negative secondary ion mass spectrometry (SIMS) of the Te matrix element with a Cs primary ion beam to analyze and determine the composition in HgCdTe epilayers with a high sensitivity (better than DELTA-x of 0.0015) and a depth resolution determined by SIMS. The method is based on matrix-induced ion yield variations in the Te signal observed in SIMS. The correlation between the Te- secondary ion yield and Cd mole fraction is a linear function. The material composition can be calculated by this technique when the Te yield profile is known provided that the composition of any two layers of the structure are known, or the structure contains a CdTe layer, for which case composition of no Hg1-xCdxTe layer is needed.

引用

页码：222 / 224

页数：3

共 8 条

[1] MOLECULAR-BEAM EPITAXY GROWTH AND INSITU ARSENIC DOPING OF P-ON-N HGCDTE HETEROJUNCTIONS [J].

ARIAS, J ;

ZANDIAN, M ;

PASKO, JG ;

SHIN, SH ;

BUBULAC, LO ;

DEWAMES, RE ;

TENNANT, WE .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2143-2148

[2]

BLATTNER RJ, 1990, SCANNING ELECTRON MI, V4, P200

[3] ION-INDUCED TOPOGRAPHY, DEPTH RESOLUTION, AND ION YIELD DURING SECONDARY ION MASS-SPECTROMETRY DEPTH PROFILING OF A GAAS/ALGAAS SUPERLATTICE - EFFECTS OF SAMPLE ROTATION [J].

CIRLIN, EH ;

VAJO, JJ ;

DOTY, RE ;

HASENBERG, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :1395-1401

[4] MOCVD HG1-XCDXTE/GAAS FOR IR DETECTORS [J].

EDWALL, DD ;

CHEN, JS ;

BAJAJ, J ;

GERTNER, ER .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 :S221-S224

[5] THE EXPONENTIAL OPTICAL-ABSORPTION BAND TAIL OF HG1-XCDXTE [J].

FINKMAN, E ;

SCHACHAM, SE .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2896-2900

[6] ELLIPSOMETRIC PROFILING OF HGCDTE HETEROSTRUCTURES [J].

MCLEVIGE, WV ;

ARIAS, JM ;

EDWALL, DD ;

JOHNSTON, SL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (05) :2483-2486

[7]

Wilson R.G., 1989, SECONDARY ION MASS S

[8] MATRIX EFFECT IN SIMS ANALYSIS USING AN O2+ PRIMARY BEAM [J].

YU, ML ;

REUTER, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :36-39

← 1 →