FACET EFFECT AND ELECTRICAL CONDUCTIVITY IN UNDOPED PULLED GASB CRYSTALS

[1] ALLRED WP, 1962, PREPARATION 3 5 COMP, V1, P187

[2] ELECTRICAL PROPERTIES OF GALLIUM ANTIMONIDE [J]. PHYSICAL REVIEW, 1955, 97 (06): : 1575 - 1578

[3] CROSS-SECTIONAL RESISTIVITY VARIATIONS IN GERMANIUM SINGLE CRYSTALS [J]. SOLID-STATE ELECTRONICS, 1960, 1 (03) : 202 - &

[4] GOORISSEN J, 1959, Z METALLKD, V50, P46

[5] DISTRIBUTION COEFFICIENTS OF IMPURITIES IN GALLIUM ANTIMONIDE [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) : 856 - &

[6] SOME PROPERTIES OF P-TYPE GALLIUM ANTIMONIDE BETWEEN 15-DEGREES-K AND 925-DEGREES-K [J]. PHYSICAL REVIEW, 1954, 95 (01): : 51 - 56

[7] A POSSIBLE MECHANISM OF CRYSTAL GROWTH FROM THE MELT AND ITS APPLICATION TO THE PROBLEM OF ANOMALOUS SEGREGATION AT CRYSTAL FACETS [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 106 - 114

[8] Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1

[1] ALLRED WP, 1962, PREPARATION 3 5 COMP, V1, P187

[2] ELECTRICAL PROPERTIES OF GALLIUM ANTIMONIDE [J]. PHYSICAL REVIEW, 1955, 97 (06): : 1575 - 1578

[3] CROSS-SECTIONAL RESISTIVITY VARIATIONS IN GERMANIUM SINGLE CRYSTALS [J]. SOLID-STATE ELECTRONICS, 1960, 1 (03) : 202 - &

[4] GOORISSEN J, 1959, Z METALLKD, V50, P46

[5] DISTRIBUTION COEFFICIENTS OF IMPURITIES IN GALLIUM ANTIMONIDE [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (05) : 856 - &

[6] SOME PROPERTIES OF P-TYPE GALLIUM ANTIMONIDE BETWEEN 15-DEGREES-K AND 925-DEGREES-K [J]. PHYSICAL REVIEW, 1954, 95 (01): : 51 - 56

[7] A POSSIBLE MECHANISM OF CRYSTAL GROWTH FROM THE MELT AND ITS APPLICATION TO THE PROBLEM OF ANOMALOUS SEGREGATION AT CRYSTAL FACETS [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 106 - 114

[8] Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1