EQUIVALENCE BETWEEN RESONANT TUNNELING AND SEQUENTIAL TUNNELING IN DOUBLE-BARRIER DIODES

被引：198

作者：

WEIL, T

VINTER, B

机构：

来源：

关键词：

D O I：

10.1063/1.97884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1281 / 1283

页数：3

共 16 条

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