MONOLITHICALLY INTEGRATED INGAALAS DIELECTRIC REFLECTORS FOR VERTICAL CAVITY OPTOELECTRONIC DEVICES

被引:13
作者
KOWALSKY, W
MAHNSS, J
机构
[1] Abteilung Optoelektronik, University of Ulm
关键词
D O I
10.1063/1.106328
中图分类号
O59 [应用物理学];
学科分类号
摘要
Monolithically integrated dielectric reflectors have opened up a new field of optoelectronic devices. Vertical cavity lasers in the AlGaAs system are grown by MBE almost as a matter of routine. In this contribution dielectric reflectors composed of InAlAs and InGaAlAs lattice matched to InP are investigated. We achieve reflectivities of 70%, 83%, and 96% using 5, 10, and 20 periods of quarter wavelength layers. Increasing the number to 30 periods results in a maximum reflectivity exceeding 99% at a center wavelength of 1.65-mu-m. These experimental results indicate that vertical cavity lasers for optical communication systems in the InGaAlAs system are feasible.
引用
收藏
页码:1011 / 1012
页数:2
相关论文
共 6 条
  • [1] CALDERA C, 1990, 16TH EUR C OPT COMM, V1, P357
  • [2] JEWELL JL, 1990, 16TH EUR C OPT COMM, V2, P933
  • [3] KOWALSKY W, 1989, OSA P PHOTONIC SWITC, V3, P48
  • [4] KOWALSKY W, 1990, 16TH EUR C OPT COMM, V1, P129
  • [5] PRANK U, 1980, ELECTRON LETT, V25, P847
  • [6] WALTHER M, 1990, 16TH EUR C OPT COMM, V1, P225