HETEROEPITAXIAL TIN FILMS GROWN BY REACTIVE ION-BEAM EPITAXY AT ROOM-TEMPERATURE

被引：5

作者：

KAWAKUBO, T

SANO, K

OOSE, M

机构：

[1] Development Center, Toshiba Corporation, Komukai Toshiba-cho 1, Saiwai-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 11B期

关键词：

REACTIVE ION BEAM EPITAXY; LOW KINETIC ENERGY; TITANIUM NITRIDE; HETEROEPITAXY; RESISTIVITY; EXPERIMENTAL DATA;

D O I：

10.1143/JJAP.32.L1692

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reactive ion beam epitaxy with an extra-low energy N2+ ion beam and a Ti molecular beam has been employed to grow hetero-epitaxial TiN films on MgO substrates. The TiN film quality drastically depends on the N2+ kinetic energy. Epitaxial TiN films with a low resistivity about 16 muOMEGA.cm were obtained at a kinetic energy of 50 eV/atom even at room substrate temperature, which is the lowest epitaxial temperature so far. At an elevated temperature, epitaxial growth was observed at a wide kinetic energy range. Epitaxial growth mechanisms in low energy reactive ion beam deposition are discussed.

引用

页码：L1692 / L1694

页数：3

共 5 条

[1]

GULBRANSEN EA, 1949, J METALS NY, V1, P741

[2] GROWTH AND PROPERTIES OF SINGLE-CRYSTAL TIN FILMS DEPOSITED BY REACTIVE MAGNETRON SPUTTERING [J].

JOHANSSON, BO ;

SUNDGREN, JE ;

GREENE, JE ;

ROCKETT, A ;

BARNETT, SA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (02) :303-307

[3] EPITAXIAL-GROWTH OF TIN FILMS ON (100) SILICON SUBSTRATES BY LASER PHYSICAL VAPOR-DEPOSITION [J].

NARAYAN, J ;

TIWARI, P ;

CHEN, X ;

SINGH, J ;

CHOWDHURY, R ;

ZHELEVA, T .

APPLIED PHYSICS LETTERS, 1992, 61 (11) :1290-1292

[4] RESULTS OF SELF-CONSISTENT BAND-STRUCTURE CALCULATIONS FOR SCN, SCO, TIC, TIN, TIO, VC, VN AND VO [J].

NECKEL, A ;

RASTL, P ;

EIBLER, R ;

WEINBERGER, P ;

SCHWARZ, K .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (04) :579-592

[5]

TOTH LE, 1971, TRANSITION METAL CAR, P118

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