SUBCRITICAL CRACK-GROWTH IN SINTERED SILICON-NITRIDE EXHIBITING A RISING R-CURVE

被引：12

作者：

OKADA, A ^{[1
]}

HIROSAKI, N ^{[1
]}

YOSHIMURA, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL, ENGN MAT RES LAB, YOKOHAMA, KANAGAWA 227, JAPAN

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1990年 / 73卷 / 07期

关键词：

crack growth; crack tip; R‐curve; sintering; stress;

D O I：

10.1111/j.1151-2916.1990.tb05274.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Subscritical crack growth of sintered silicon nitride was analyzed in terms of the R‐curve. Provided that the stress intensity at the crack tip governs the subcritical crack‐growth velocity, the KI–V relationship of sintered silicon nitride exhibiting a rising R‐curve is shown to shift to the high‐KI region as the crack advances. Copyright © 1990, Wiley Blackwell. All rights reserved

引用

页码：2095 / 2096

页数：2

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