PHOTOEMISSION-STUDY OF THE SURFACE-STATES THAT PIN THE FERMI LEVEL AT SI(100)2X1 SURFACES

被引:78
作者
MARTENSSON, P
CRICENTI, A
HANSSON, GV
机构
来源
PHYSICAL REVIEW B | 1986年 / 33卷 / 12期
关键词
D O I
10.1103/PhysRevB.33.8855
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:8855 / 8858
页数:4
相关论文
共 21 条
[1]   DIFFRACTION OF HE AT THE RECONSTRUCTED SI(100) SURFACE [J].
CARDILLO, MJ ;
BECKER, GE .
PHYSICAL REVIEW B, 1980, 21 (04) :1497-1510
[2]   SURFACE-STATE OPTICAL-ABSORPTION ON THE CLEAN SI(100)2X1 SURFACE [J].
CHABAL, YJ ;
CHRISTMAN, SB ;
CHABAN, EE ;
YIN, MT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :1241-1242
[3]  
EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492
[4]   ELECTRONIC EXCITATIONS ON SI(100)(2X1) [J].
FARRELL, HH ;
STUCKI, F ;
ANDERSON, J ;
FRANKEL, DJ ;
LAPEYRE, GJ ;
LEVINSON, M .
PHYSICAL REVIEW B, 1984, 30 (02) :721-725
[5]   GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES [J].
HIMPSEL, FJ ;
HEIMANN, P ;
CHIANG, TC ;
EASTMAN, DE .
PHYSICAL REVIEW LETTERS, 1980, 45 (13) :1112-1115
[6]   PHOTOEMISSION-STUDIES OF INTRINSIC SURFACE-STATES ON SI(100) [J].
HIMPSEL, FJ ;
EASTMAN, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1297-1299
[7]   PROBING VALENCE STATES WITH PHOTOEMISSION AND INVERSE PHOTOEMISSION [J].
HIMPSEL, FJ ;
FAUSTER, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :815-821
[8]   DETERMINATION OF THE FERMI-LEVEL PINNING POSITION AT SI(111) SURFACES [J].
HIMPSEL, FJ ;
HOLLINGER, G ;
POLLAK, RA .
PHYSICAL REVIEW B, 1983, 28 (12) :7014-7018
[9]  
ISHIZAKA A, 1982, 2ND P INT S MOL BEAM, P183
[10]   METAL-INSULATOR-TRANSITION ON THE GE(001) SURFACE [J].
KEVAN, SD ;
STOFFEL, NG .
PHYSICAL REVIEW LETTERS, 1984, 53 (07) :702-705