TRANSMITTANCE OF AIR-SIO2-POLYSILICON-SIO2-SI STRUCTURES

被引：12

作者：

ANAGNOSTOPOULOS, C ^{[1
]}

SADASIV, G ^{[1
]}

机构：

[1] UNIV RHODE ISLAND,DEPT ELECT ENGN,KINGSTON,RI 02881

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1975年 / SC10卷 / 03期

关键词：

D O I：

10.1109/JSSC.1975.1050583

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：177 / 179

页数：3

共 12 条

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TITLE, RS ;

WEISER, K ;

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PHYSICAL REVIEW B, 1970, 1 (06) :2632-&

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BROWN, RW ;

CHAMBERLAIN, SG .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (02) :675-685

[3] THICKNESS MEASUREMENT OF SILICON DIOXIDE LAYERS BY ULTRAVIOLET-VISIBLE INTERFERENCE METHOD [J].

CORL, EA ;

WIMPFHEIMER, H .

SOLID-STATE ELECTRONICS, 1964, 7 (10) :755-&

[4]

HEAVENS OS, 1965, OPTICAL PROPERTIES T, P66

[5] TRANSPARENT ELECTRODE CCD IMAGE SENSOR FOR A READING AID FOR BLIND [J].

MELEN, RD ;

MEINDL, JD .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (02) :41-49

[6]

MICHON CJ, 1974, FEB IEEE SOL STAT CI

[7]

MOSS TS, 1973, SEMICONDUCTOR OPTO E, P301

[8] OPTICAL CONSTANTS OF SILICON IN THE REGION 1 TO 10 EV [J].

PHILIPP, HR ;

TAFT, EA .

PHYSICAL REVIEW, 1960, 120 (01) :37-38

[9]

PHILIPP HR, 1972, AM I PHYS HDB, P6

[10]

REIZMANN T, 1967, SOLID STATE ELECTRON, V10, P625

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